7.6 Advanced MOSFET issues

Table of Contents - 1 2 3 4 5 6 7 8 9 R S
In this Chapter:
  1. Subthreshold current
  2. Field dependence of the channel mobility
  3. Short channel effects
    1. Channel length modulation
    2. Drain induced barrier lowering (DIBL)
    3. Punchthrough
  4. Parasitic bipolar action
© Bart J. Van Zeghbroeck, 1996, 1997