| Name | Symbol | Germanium | Silicon | Gallium Arsenide | |
|---|---|---|---|---|---|
| Bandgap energy at 300 K | Eg [eV] | 0.66 | 1.12 | 1.424 | |
| Breakdown Field | Ebr [V/cm] | 105 | 3 x 105 | 4 x 105 | |
| Effective density of states in the conduction band at 300 K | NC [cm-3] | 1.02 x 1019 | 2.82 x 1019 | 4.35 x 1017 | |
| Effective density of states in the valence band at 300 K | NV [cm-3] | 5.65 x 1018 | 1.83 x 1019 | 7.57 x 1018 | |
| Intrinsic concentration at 300 K | ni [cm-3] | 2.8 x 1013 | 1.0 x 1010 | 2.0 x 106 | |
| Effective mass for density of states calculations | |||||
| Electrons | me* / m0 | 0.55 | 1.08 | 0.067 | |
| Holes | mh* / m0 | 0.37 | 0.81 | 0.45 | |
| Electron affinity | c [V] | 4.0 | 4.05 | 4.07 | |
| Mobility at 300 K | |||||
| Electrons | mn [cm2/V-s] | 3900 | 1400 | 8800 | |
| Holes | mp [cm2/V-s] | 1900 | 450 | 400 | |
| Relative dielectric constant | es/ e0 | 16 | 11.9 | 13.1 | |
| Thermal conductivity at 300 K | c [W/cmK] | 0.6 | 1.5 | 0.46 | |
| Refractive index at 632.8 nm wavelength | n | 5.441-i0.785 | 3.875-i0.0181 | 3.856-i0.196 |