Doping dependence of the mobility - Example

A silicon wafer contains 10¹⁸ cm^-3 phosphor atoms. Using the data in table 2.9.1 calculate the resistivity and conductivity of the material. Repeat for arsenic and boron atoms.
Answer:

Plugging the values from table 2.9.1



into the following equation



one obtains a mobility of 277 cm²/V-sec for phosporus- doped material, 284 cm²/V-sec for arsenic-doped material and 153 cm²/V-sec for boron-doped material, corresponding to a resistivity of 22.6, 22.0 and 40.9 mWcm and a conductivity of 44.3, 45.4 and 24.5 1/Wcm.