Metal-to-semiconductor junctions are of great importance since they are present in every semiconductor device. They can behave either as a Schottky  barrier or as an ohmic contact dependent on the characteristics of the interface. We will focus primarily on the Schottky barriers. This chapter contains an analysis of the electrostatics of the M-S junction. Calculated are the charge, field and potential distribution within the device. This chapter also contains a derivation of the current voltage characteristics due to diffusion, thermionic emission and tunneling in Metal-Semiconductor junctions. |
